| 摘要 |
A memory cell of a stacked type is formed by a MOS transistor and a ferroelectric capacitor. The MOS transistor is formed in an active region of a substrate of semiconductor material and comprises a conductive region. The ferroelectric capacitor is formed on top of the active region and comprises a first and a second electrodes separated by a ferroelectric region. A contact region connects the conductive region of the MOS transistor to the first electrode of the ferroelectric capacitor. The ferroelectric capacitor has a non-planar structure, formed by a horizontal portion and two side portions extending transversely to, and in direct electrical contact with, the horizontal portion.
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