发明名称 |
PLANARIZED MICROELECTRONIC SUBSTRATES |
摘要 |
The instant invention is a process for planarizing a microelectronic substrate with a cross-linked polymer dielectric layer, comprising the steps of: (a) heating such a substrate coated with a layer comprising an uncured cross-linkable polymer and a glass transition suppression modifier to a temperature greater than the glass transition temperature of the layer, the temperature being less than the curing temperature of the uncured cross-linkable polymer to form a substrate coated with a heat flowed layer; and (b) heating the substrate coated with the heat flowed layer to a curing temperature of the uncured cross-linkable polymer of the heated layer to cure the uncured cross-linkable polymer to form a planarized substrate wherein the percent planarization at 100 micrometers is greater than fifty percent. The instant invention is a microelectronic device made using the above-described process. The instant invention is a composition of matter, comprising: an essentially solvent free composition comprising an uncured cross-linkable polymer and a glass transition suppression modifier, the composition having a glass transition temperature sufficiently less than the curing temperature of the uncured composition so that if the uncured composition is heated to a temperature above its glass transition temperature but below its curing temperature, the uncured composition will flow. |
申请公布号 |
WO03064495(A2) |
申请公布日期 |
2003.08.07 |
申请号 |
WO2002US35756 |
申请日期 |
2002.11.06 |
申请人 |
DOW GLOBAL TECHNOLOGIES INC.;FOSTER, KENNETH, L.;RADLER, MICHAEL, J. |
发明人 |
FOSTER, KENNETH, L.;RADLER, MICHAEL, J. |
分类号 |
H01L21/768;C08F2/46;C08G61/10;H01B3/30;H01B3/44;H01L21/312;H05K1/00;H05K3/28;H05K3/46 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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