HARD MASK REMOVAL PROCESS USING A SACRIFICAL OXIDATION CROSS-REFERENCE TO RELATED APPLICATIONS

摘要

A method for removing a hard mask (26') during a semiconductor fabrication process is disclosed in which a hard mask (26') material is used to pattern a first material (20). The method includes a two-step removal process that includes performing a major wet etch to remove a majority of the hard mask (26') material, followed by performing a minor dry etch that removes a remainder of the hard mask (26') material.