发明名称 Method and apparatus for building up large scale on chip de-coupling capacitor on standard CMOS/SOI technology
摘要 The apparatus and method for forming de-coupling capacitors on top of SOC VLSI chip. The introduced large amount of de-coupling capacitor is intended to solve the power delivery problem of highly integrated and powered VLSI chip, especially in the Silicon-On-Insulator (SOI) technology. This invention proposes a design scheme which could utilize virtually unused area to build efficient de-coupling capacitors without introducing additional manufacture cost. This design scheme is especially effective when the VLSI technology is scaled down further.
申请公布号 US2003148578(A1) 申请公布日期 2003.08.07
申请号 US20020067317 申请日期 2002.02.07
申请人 KU JOSEPH W.;VOORDE PAUL VANDE 发明人 KU JOSEPH W.;VOORDE PAUL VANDE
分类号 H01L23/522;H01L27/08;(IPC1-7):H01L21/824 主分类号 H01L23/522
代理机构 代理人
主权项
地址