发明名称 |
Method for removing contamination and method for fabricating semiconductor device |
摘要 |
A method for removing contamination on a semiconductor substrate is disclosed. The contamination contains at least one element belonging to one of 3A group, 3B group and 4A group of long-period form of periodic system of elements. The method comprises first and second process steps. The first process is wet processing the semiconductor substrate by first remover liquid that contains one of acid and alkali. The second process is wet processing the semiconductor substrate by second remover liquid that contains oxidizing reagent and one of hydrofluoric acid and salt of hydrofluoric acid.
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申请公布号 |
US2003148627(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20030357087 |
申请日期 |
2003.02.03 |
申请人 |
AOKI HIDEMITSU;WATANABE KAORI |
发明人 |
AOKI HIDEMITSU;WATANABE KAORI |
分类号 |
H01L21/306;C09K13/08;H01L21/02;H01L21/302;H01L21/304;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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