| 摘要 |
The invention relates to a semiconductor laser element that comprises a first semiconductor layer system (102, 103), produced on a substrate (101) by epitaxial growth, of a first material that has a lattice constant that is different from the lattice constant of the substrate. A quantification layer (104) that has a higher lattice constant than the lattice constant of the first semiconductor is produced on the first semiconductor material by epitaxial growth in such a manner that a quantification effect is produced in the quantification layer (104) that suppresses or strongly inhibits the diffusion of the charged particles. A second semiconductor layer system (105, 106, 107) is produced on the quantification layer by epitaxial growth. Nothing to translate |
