| 摘要 |
A variable impedance load 104 is provided at the output of a radio frequency RF driver amplifier 102 having a variable gain. In an exemplary embodiment, the variable load 104 comprises a resistor R in series with a semiconductor device M1. The semiconductor device M1 has an impedance level determined by a drive current. The value of the drive current is related to the gain of the RF driver amplifier 102. |
