| 摘要 |
In the present invention, some layers, the last of which is the Cu film serving as the nonmagnetic layer, are formed on the substrate by means of sputtering performed at a reduced pressure in a film-forming sputtering chamber. The substrate is then exposed in a gas atmosphere in a gas-exposure chamber filled with gas that activates a surface of the Cu film. The remaining layers of the spin valve film are formed on the substrate, in the film-forming sputtering chamber.
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