| 摘要 |
The invention relates to a method for etching structures in an etching body (19), especially recesses in a silicon body which are laterally and precisely defined by an etching mask, by means of a plasma (15). According to said method, a high-frequency pulsed, low-frequency modulated high frequency power is injected into the etching body (19), at least temporarily, by means of a high-frequency alternating voltage, and the intensity of the plasma (15) is modulated as a function of time. |
