| 摘要 |
The invention is directed to an arrangement for monitoring the energy radiated by an EUV radiation source with respect to energy variations acting in an illumination beam path, particularly for controlling the dose stability in EUV lithography for chip fabrication in semiconductor technology. The object of the invention, to find a novel possibility for detecting variations in the radiation emitted by EUV sources which allows fluctuations in pulse energy as well as spatial fluctuations acting in the illumination beam path to be detected, is met according to the invention in a radiation source having a plasma column emitting extreme ultraviolet radiation in that a detection beam path is separated from the illumination beam path with respect to the plasma column and has an energy monitoring unit for measuring pulse energy, so that the illumination beam path is not impaired by the energy measurement, and the detection beam path is matched to the illumination beam path with respect to bundle extension and optical losses.
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