发明名称 |
Method of forming an oxidation-resistant TiSiN film |
摘要 |
A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.
|
申请公布号 |
US2003148605(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20020210204 |
申请日期 |
2002.08.02 |
申请人 |
SHIMOGAKI YUKIHIRO;KAWANO YUMIKO |
发明人 |
SHIMOGAKI YUKIHIRO;KAWANO YUMIKO |
分类号 |
C23C16/42;C23C16/34;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/320 |
主分类号 |
C23C16/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|