| 摘要 |
<p>A method for growing a GaN compound semiconductor crystal on the surface of a substrate which is a rare-earth group XIII (IIIB) perovskite crystal containing one or more rare earth elements, wherein the thickness of the substrate is 250 µm or less and the stress exerted by the substrate on the GaN thick-film crystal is decreased by the difference in the coefficient of thermal expansion.</p> |
