STORAGE DEVICE

摘要

In a memory array consisting of memory cells using a variable resistance storage element and a selection transistor, when current flows in the selection transistor in all the memory cells on the selection word line, non-selection data line should not be driven. For this, a source line parallel to the data line is provided, a pre-charge circuit is provided for driving the both equipotentially, and a circuit for selectively driving the source line is arranged. With this configuration, it is possible to create a current path and generate a read-out signal only in cells selected by the row and column. Thus, it is possible to realize a non-volatile memory such as a phase-change memory having a high integrity, a low noise, and low power consumption as compared to the conventional one.