发明名称 Etch rate uniformity
摘要 An etching apparatus has a chamber enclosing a first electrode, a second electrode, confinement rings, a focus ring, and a shield. The first electrode is coupled to a source of a fixed potential. The second electrode is coupled to a dual frequency RF power source. The confinement rings are disposed between the first electrode and the second electrode. The chamber is formed of an electrically conductive material coupled to the source. The focus ring substantially encircles the second electrode and electrically insulates the second electrode. The shield substantially encircles the focus ring. The distance between an edge of the second electrode and an edge of the shield is at least less than the distance between the edge of the second electrode and an edge of the first electrode. The shield is formed of an electrically conductive material coupled to the source of fixed potential.
申请公布号 US2003148611(A1) 申请公布日期 2003.08.07
申请号 US20020293898 申请日期 2002.11.12
申请人 LAM RESEARCH CORPORATION, A DELAWARE CORPORATION 发明人 DHINDSA RAJINDER;KADKHODAYAN BOBBY
分类号 H01J37/32;H01L21/00;(IPC1-7):C25F1/00;C25F3/30;C25F5/00;B08B6/00;C23F1/00;B44C1/22;C03C15/00;C03C25/68;H01L21/302;H01L21/461 主分类号 H01J37/32
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