发明名称 |
Semiconductor substrate processing method |
摘要 |
An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (10) in the direction of radiuses of the SOI substrate (10) to bring a buried oxide film (2) in the edge part of the SOI substrate (10) into a silicon-rich state. Thus an SOI substrate (100) is provided, where the buried oxide film (2) has substantially been eliminated in the edge part.
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申请公布号 |
US2003148595(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20030357392 |
申请日期 |
2003.02.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YOSHIDA YOSHIKO;NARUOKA HIDEKI;KIMURA YASUHIRO;YAMAGUCHI YASUO;IWAMATSU TOSHIAKI;HIRANO YUUICHI |
分类号 |
H01L21/265;H01L21/02;H01L21/3105;H01L21/3115;H01L21/762;H01L27/12;(IPC1-7):H01L21/84;H01L21/322;H01L21/00;H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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地址 |
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