| 摘要 |
A driving element corresponding to each pixel is formed in the pixel region, and a driving element for controlling the driving element in each pixel is formed in the driver region provided around the pixel region. The driving element in each of the pixel region and the driver region uses, as an active layer, a polycrystalline semiconductor layer which is formed by applying laser annealing to a single amorphous silicon layer and polycrystallizing the amorphous layer. The grain size in the polycrystalline semiconductor layer of the driving element in the pixel region is formed smaller than the grain size in the polycrystalline semiconductor layer of the driving element in the driver region, so as to realize the driving element capable of high speed operation in the driver region and the driving elements with less non-uniformity in the pixel region. Further, by selectively forming a metal layer which functions as a light shielding layer as well under the polycrystalline semiconductor layer of the driving element in the pixel region, the grain size of the polycrystalline semiconductor layer obtained in each of the pixel region and the driver region using laser annealing under the same conditions can be adjusted to an optimum size. |
