发明名称 |
Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof |
摘要 |
A semiconductor device includes a first semiconductor region having a buried oxide layer formed therein, a second semiconductor region in which the buried oxide layer does not exist, a trench formed to such a depth as to reach at least the buried oxide layer in a boundary portion between the first and second semiconductor regions, and an isolation insulating layer buried in the trench. |
申请公布号 |
US2003146488(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20030360741 |
申请日期 |
2003.02.10 |
申请人 |
NAGANO HAJIME;YAMADA TAKASHI;SATO TSUTOMU;MIZUSHIMA ICHIRO;FUJII OSAMU |
发明人 |
NAGANO HAJIME;YAMADA TAKASHI;SATO TSUTOMU;MIZUSHIMA ICHIRO;FUJII OSAMU |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8242;H01L21/84;H01L27/08;H01L27/088;H01L27/10;H01L27/108;H01L27/12;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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