| 摘要 |
The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn-junction 2, 3 of a light emitted diode on a substrate 1, a layer of SiO2 is deposited on the periphery of the LED die near the scribe line of the wafer, then a transparent conductive layer 5 is deposited, then a layer of gold or AuGe etc 6, is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) 7 is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode 10 is formed on the substrate by metal contact. Another form of the electrode structure of the present invention is making both the positive electrode 7 and negative electrode 7a on the front side of the LED by etching the p-type semiconductor 3 of the pn-junction and forming a strip of negative electrode 7a on the n-type semiconductor area 2, the positive electrode is formed on the p-type semiconductor area.
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