Method for removing resists

摘要

The method for removing resists of the present invention comprises a step of contacting a copper-containing substrate having a resist layer thereon with a cleaning composition containing 1% by weight or more of hydrogen peroxide and ammonia or ammonium ion; and a step of contacting the substrate thus contact-treated with an organic solvent-containing resist stripping composition, thereby removing the resist layer. The other method for removing resists of the present invention comprises a step of contacting a substrate having thereon a resist layer, preferably a non-ashed resist layer, with a resist stripping composition of pH 5 or more containing 4 to 30% by weight of hydrogen peroxide, 0.01 to 15% by weight of ammonium ion, and 0.01 to 15% by weight of phosphate ion and/or carbonate ion.