发明名称 Rule-based opc evaluating method and simulation base opc model evaluating method
摘要 A rule-based OPC evaluating method and a simulation-based OPC model evaluating method for accurately evaluating line width controllability are disclosed. Mask pattern design data about an evaluation-use mask are input to rule-based OPC to obtain correction data about the mask pattern on the evaluation-use mask. An evaluation-use wafer is fabricated based on the correction data thus acquired. Gate patterns on the evaluation-use wafer are measured for size. Based on a simulation-based OPC model having undergone process calibration, simulation data are output corresponding to all gate patterns on the evaluation-use wafer. The measured data about the evaluation-use gate patterns are compared with the simulation data, whereby the rule-based OPC is evaluated.
申请公布号 US2003149955(A1) 申请公布日期 2003.08.07
申请号 US20030332631 申请日期 2003.01.10
申请人 OHNUMA HIDETOSHI 发明人 OHNUMA HIDETOSHI
分类号 G03F1/08;G03F1/14;G03F1/36;G03F1/68;G03F7/20;(IPC1-7):G06F17/50 主分类号 G03F1/08
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