发明名称 |
Methods for controlling and reducing profile variation in photoresist trimming |
摘要 |
A method for controlling a removal of photoresist material from a semiconductor substrate is provided. The method includes providing the semiconductor substrate having a photoresist mask formed thereon. The method also includes forming a conformal layer of polymer over the photoresist mask and a portion of the semiconductor substrate not covered by the photoresist mask while concurrently removing a portion of the conformal layer of polymer. The thickness of the conformal layer of polymer on each region of the semiconductor substrate is set to vary depending on a removal rate of the conformal layer of polymer in each region of the semiconductor substrate.
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申请公布号 |
US2003148224(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20030378122 |
申请日期 |
2003.02.28 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
VAHEDI VAHID;BRALY LINDA B. |
分类号 |
G03F7/42;H01L21/027;H01L21/311;(IPC1-7):G03F7/36 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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