| 摘要 |
<p>A method for manufacturing a semiconductor device comprises a step of growing a nitride semiconductor layer on a substrate of a different type, a step of, thereafter, joining a support substrate to the nitride semiconductor layer, and a step of, thereafter, removing the substrate of the different type. In the joining step, a conductive layer is formed of an alloy eutectic. In the different-type substrate removing step, the removal is effected by laser beam application, polishing, and chemical polishing. The method further comprises a step of separating the nitride semiconductor layer into chips by etching the exposed surface of the nitride semiconductor layer after the different-type substrate removing step. The method further comprises a step of forming projections and recesses in the exposed surface of the nitride semiconductor layer after the different-type substrate removing step.</p> |
