METHOD OF TREATING SURFACE, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND APPARATUS FOR TREATMENT

摘要

A method of surface treatment in which a surface having a structure formed thereon is treated with a supercritical fluid (4), characterized by adding ammonium hydroxide, an alkanolamine, a fluoroamine, hydrofluoric acid, or the like as a dissolution aid (5) to the supercritical fluid (4). A surface-active substance (6) may be added to the supercritical fluid (4) together with the dissolution aid (5). The surface-active substance (6) may comprise a polar solvent. The method enables residues to be removed without fail by treatment with the supercritical fluid as the only treatment.