| 摘要 |
A semiconductor device has a first IGBT (1) for controlling a principal current and a second IGBT (2) for preventing an over-current of the first IGBT (1). A diode portion (11) is disposed between the emitter (5) of the first IGBT (1) and the emitter (6) of the second IGBT (2) so as to be in parallel with a sensing resistor (8). The diode portion (11) is composed of a first diode (9) and a second diode (10), which are connected in reverse series to each other. In order to prevent the over-current of the first IGBT (1) and the destruction of the second IGBT (2), each of the diodes (9, 10) has a breakdown voltage in the reverse voltage direction, which is lower than the endurance voltage between the emitters (5, 6) and is higher than the upper limit of the voltage sensed by the sensing resistor (8).
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