发明名称 |
Thin film magnetic memory device for selectively supplying a desired data write current to a plurality of memory blocks |
摘要 |
Each of N memory blocks of first to Nth stages includes a plurality of first and second driver units. The plurality of first and second driver units are respectively provided corresponding to one end and another end of a plurality of digit lines included in each memory block. Each of the first driver units in memory blocks before a selected memory block connects a corresponding digit line to a first voltage according to a voltage level on a digit line of the same row in a memory block of a previous stage. A second driver unit in the selected memory block connects a corresponding digit line to a second voltage in order to supply a data write current. In other words, digit lines in the memory blocks before the selected memory block are not used as current lines but as signal lines. |
申请公布号 |
US2003147274(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20030334713 |
申请日期 |
2003.01.02 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUJI TAKAHARU |
分类号 |
G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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