| 摘要 |
<p>A phase shifter comprises a circuit board having a semiinsulation layer. An active layer is formed in a region where a transmission line is provided on one face of the semiinsulation layer, and a first ground conductor layer on the other face. A transmission line is formed on the top of the active layer, and a second ground conductor layer on the face where a transmission line of the semiinsulation layer is provided is formed near and along one side of the transmission line. When the first and second ground conductor layers are grounded to impress a bias voltage of negative polarity on the transmission line, a reverse bias acts on the active layer to form a depletion layer, so that a capacitance is equivalently connected to a transmission line having an inductance. The phase shift quantity is arbitrarily controlled by varying this capacitance value with a bias voltage.</p> |
