| 摘要 |
<p>A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well active layer has a laminated structure in which a barrier layer undoped region (In0.02Ga0.98N layer 702), a quantum well layer (undoped In0.2Ga0.8N layer 703) and a barrier layer n-type region (n-type In0.02Ga0.98N layer 701) are formed in this order. The Si concentration of a barrier layer n-type region is up to 5E18cm-3.</p> |
