DRY ETCHING METHOD OF OXIDE LAYER IN DUAL DAMASCENE PROCESS

摘要

PURPOSE: A dry etching method of an oxide layer in a dual damascene process is provided to reduce local particles generating concentrativily in a specific area and embody accurate etching. CONSTITUTION: The first and second oxide layer(12) are formed on a semiconductor substrate(10). An SiN layer as a stopper layer(11,13) is formed between the first oxide layer and the semiconductor substrate and between the first and second oxide layer. A photoresist layer(15) is formed on the second oxide layer and the second oxide layer is selectively etched to form a trench(17). A dry etching process is carried out on the second oxide layer using the photoresist layer as a mask. A metal line is formed.