| 摘要 |
PURPOSE: A TFT substrate for LCD and its fabricating method are provided to reduce the number of processes including processes for forming a black mask and a planarization layer by forming a TFT within a trench. CONSTITUTION: A quartz substrate having a trench is provided. A silicon layer(106) and an alumina layer(108) are formed on the surface of the trench. An active layer(110) including a source region, a drain region, and a channel region is formed on the alumina layer. A gate electrode(115) including a gate oxide layer(112) and a gate line are formed on the surface of the active layer. The first insulating oxide layer(117) is formed on the resultant. The first contact hole is formed on first insulating oxide layer. A data line(121) is formed on the first insulating oxide layer of an upper portion of the gate electrode. The second insulating oxide layer(122) having the second contact hole(123) is formed on the first insulating oxide layer. A pixel electrode(124) is formed on an upper portion of the second insulating oxide layer.
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