| 摘要 |
The memory has memory cells in a substrate (10). Each memory cell contains a selection transistor (15-17) and a trench capacitor (12-14). The memory electrodes (12) of a substrate region are formed along the walls of the trench (11). A cell pate forming the common counter electrode for several memory cells is made from a conducting film inside the trench. The cell plate (14) has a strip-shaped structure (14i) on the substrate surface. |
