发明名称 Improved image sensor
摘要 An image sensor has pixels of four-transistor, pinned-photodiode type. In each pixel, the charge on a photodiode (22) is transferred by transfer gate (14) to a sensing node (Vpix). Readout of reset and read voltages is via an amplifier (36). A gain capacitor (Ch) is connected in feedback across the amplifier (36) and the read and reset gates are controlled such that the pixel is reset to a virtual ground voltage controlled by Ch and independent of the pixel parasitic capacitance (Cp). <IMAGE>
申请公布号 EP1333661(A1) 申请公布日期 2003.08.06
申请号 EP20020250693 申请日期 2002.02.01
申请人 STMICROELECTRONICS LIMITED 发明人 HENDERSON, ROBERT
分类号 H04N5/335;H04N5/365;H04N5/3745;(IPC1-7):H04N3/15 主分类号 H04N5/335
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