METHOD FOR FORMING THE SAME TIME STI BLOCKING LAYER

摘要

PURPOSE: A method for forming the same time STI(Shallow Trench Isolation) blocking layer is provided to improve contact resistance by preventing an STI spiking in a sidewall etch process. CONSTITUTION: A sidewall is deposited on an STI(1) and a poly(2). An STI block pattern is formed on the STI to contact. A nitride blocking layer(10) is formed by etching the STI block pattern. A silicide(5) is formed on the STI and the poly. An oxide(11) is formed thereon. A pre-metal dielectric CMP(Chemical Mechanical Polishing) process(12) and a contact etch process(13) are performed after the oxide is formed. The thickness of the deposited sidewall is about 1000 to 1300 angstrom. The STI block pattern is formed with the photoresist. The thickness of the nitride blocking layer is about 1000 to 1300 angstrom.