发明名称 |
High performance step-edge squids on a sapphire substrate and method of fabrication |
摘要 |
YBCO step-edge junctions and SQUID on sapphire substrates using CeO2 as a buffer layer are fabricated. A steep step-edge is formed in the CeO2 buffer layer by the Ar<+> ion milling of the buffer layer over a shadow mask having an overhang end structure which allows for an extended time of milling for forming a deep steep step-edge within the buffer layer. The step angle is greater than 81 DEG as measured by AFM. A high quality YBCO film is then epitaxially grown by pulse laser deposition. After patterning, the junctions display RSJ-type I-V characteristics. The sapphire based YBCO step-edge SQUIDs are installed onto a SQUID microscope system. SQUIDs fabricated by the step-edge technique exhibit excellent magnetic field modulation, high imaging qualities, and low noise. <IMAGE>
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申请公布号 |
EP1333505(A2) |
申请公布日期 |
2003.08.06 |
申请号 |
EP20030250461 |
申请日期 |
2003.01.24 |
申请人 |
THE UNIVERSITY OF MARYLAND |
发明人 |
VENKATESAN, THIRUMALAI;MING, BING;VISPUTE, RATNAKAR D. |
分类号 |
G01R33/035;G01R33/038;H01L39/22;H01L39/24;(IPC1-7):H01L39/24 |
主分类号 |
G01R33/035 |
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