| 摘要 |
A light shielding layer is formed over a substrate such as a glass substrate on which a silicon nitride layer as a blocking layer and a silicon oxide layer as an insulating layer having an interface state density lower than that of the blocking layer are formed on the light shielding layer and the glass substrate. An amorphous semiconductor layer which is an original material to be transformed into a polycrystalline semiconductor layer constituting a driving element is formed on the insulating layer having the lower interface state density and the amorphous semiconductor layer is polycrystallized by annealing, for example, laser-annealing to generate a polycrystalline semiconductor layer. The blocking layer reliably prevents impurities from entering the polycrystalline semiconductor layer from either the substrate side or the light shielding layer side. Further, because the polycrystalline semiconductor layer is formed on the insulating layer of which interface state density is low, fluctuations in characteristics of the driving element employing the polycrystalline semiconductor layer as an active layer can be avoided. |
