METHOD OF FORMING INTERCONNECTION IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming interconnection in a semiconductor device is provided to prevent a leakage current without forming a leakage current preventing layer. CONSTITUTION: A groove for interconnection is formed in an interlayer dielectric(50). An element(for example, N2) for preventing a leakage current is doped on the interlayer dielectric. A material for interconnection is stacked and the groove is filled.