Ion plating method and system for forming a wiring on a semiconductor device

摘要

In an ion plating system, a wafer (201) ion which a semiconductor wiring film of e.g. Cu is to be formed is held by a wafer substrate holder (3) disposed in a vacuum chamber (2); the material of the semiconductor wiring film is evaporated by an evaporation source (4) disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source (10).