| 摘要 |
Provided herein is a substrate processing system for semiconductor manufacturing. Such system comprises a process chamber; and exhaust system; and a means to provide cleaning gas. The exhaust systemcomprises a vacuum pump, a vacuum exhaust line, and a filtering apparatus installed downstream for the vacuum pump, a vacuum exhaust line, and a filtering apparatus installed downstream from the vacuum pump and within ghte vacuum exhaust line. Also provided is a method for eliminating or reducing solid residue accumulation in an exhaust line by introducing cleaning gas to the process chamber and further to the exhaust line; traffing solid residue by a filtering apparatus downstream for vacuum pump and within the exhaust line; trapping solid residue by a filtering apparatus downstream from vacuum pump and within the exhaust line; heating the filtering apparatus to re-activate the cleaning gas, which reacts with trapped solid residue and convert it to gaseous residue; and releasing the gaseous residue through the exhaust line. In-situ or remote plasma resource cleaning may be employed in conjunction with the above method.
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