| 摘要 |
An n+ type emitter region and a p-type base region are formed in contact with one main surface of an n-type collector region, a p-type cathode region is formed in a ring shape in contact with the main surface so as to enclose the emitter region and the base region, the potential at the cathode region is sustained at a level equal to the potential at the emitter region and a p-type guard ring region is formed in a ring shape so as to enclose the cathode region. This structure prevents the base drive circuit from becoming damaged by an avalanche breakdown current.
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