发明名称 Method and apparatus employing optical emission spectroscopy to detect a fault in process conditions of a semiconductor processing system
摘要 A method and an apparatus system feature detecting faults in process conditions of a plasma-based semiconductor processing system by sensing the spectral emissions of the plasma. As a result, the method includes sensing optical energy produced by the plasma and identifying the fault in the process conditions as a function of one or more of the plurality of spectral bands. To that end, the apparatus includes a detector in optical communication with the processing chamber to sense optical energy generated by the plasma, and a spectrum analyzer, in electrical communication with the optical detector. The spectrum analyzer resolves the spectral bands and produces information corresponding thereto. A processor is in electrical communication with the spectrum analyzer, and a memory is in electrical communication with the processor. The memory includes a computer-readable medium having a computer-readable program embodied therein that controls the system to carry-out the method.
申请公布号 US6603538(B1) 申请公布日期 2003.08.05
申请号 US20000721403 申请日期 2000.11.21
申请人 APPLIED MATERIALS, INC. 发明人 OLUSEYI HAKEEM;SARFATY MOSHE
分类号 G01N21/73;(IPC1-7):G01N21/62;H01L21/00;H01L21/66 主分类号 G01N21/73
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