Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor

摘要

A low-power high-frequency bipolar transistor is formed to have a small self-aligned base region that reduces the base-to-collector capacitance, and small self-aligned base and emitter contacts that reduce the base-to-emitter capacitance and the base resistance. The base and emitter contacts are formed to have sub-lithographic feature sizes.