| 摘要 |
A semiconductor laser device having high optical output power is provided. The semiconductor laser device has an n-type lower cladding layer, a lower optical confinement layer, an active layer having a quantum well structure, an upper optical confinement layer, a Zn-doped p-type upper cladding layer, and a cap layer formed on an n-type semiconductor substrate in this order. A nondoped semiconductor layer having a thickness of 10 to 100 nm, in particular, a nondoped InP layer, is interposed between the upper optical confinement layer and the Zn-doped p-type upper cladding layer.
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