发明名称 |
Method of pulse programming, in particular for high-parallelism memory devices, and a memory device implementing the method |
摘要 |
A pulse programming method for a non-volatile memory device includes: addressing memory cells to be programmed within the device by selecting corresponding hierarchic decoder transistors; biasing the gate terminals of the memory cells; and programming the memory cells by applying a voltage pulse, regulated by a bias circuit, to the drain terminals of the memory cells. Advantageously, the programming method further comprises a step of precharging an internal node of the bias circuit before starting the programming step, the internal node being connected to a parasitic capacitance of the memory device.
|
申请公布号 |
US6603681(B2) |
申请公布日期 |
2003.08.05 |
申请号 |
US20010002599 |
申请日期 |
2001.10.31 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MICHELONI RINO;SACCO ANDREA |
分类号 |
G11C16/10;G11C16/24;(IPC1-7):G11C16/04;G11C7/00 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|