Metal silicide gate transistors

摘要

A method for implementing a self-aligned metal silicide gate is achieved by confining a metal within a recess overlying a channel and annealing to cause metal and its overlying silicon to interact to form the self-aligned metal silicide gate. A gate dielectric layer formed of oxynitride or a nitride/oxide stack is formed on the bottom and sidewalls of the recess prior to depositing the silicon. The metal is removed except for the portion of the metal in the recess. A planarization step is performed to remove the remaining unreacted silicon by chemical mechanical polishing until no silicon is detected.