发明名称 |
Method for fabricating semiconductor devices |
摘要 |
The present invention is to provide a method for fabricating semiconductor devices capable of eliminating a height difference on a base member caused by a residual plating seed layer remained in a portion where an electrode comes into contact and is thus prevented from contacting with an electrolytic polishing fluid, where such height difference has been a problem in introducing the electrolytic polishing process into wafer process. The method comprises the steps of forming a plating seed layer on the base member; forming by the plating process a plated film on the plating seed layer in an area excluding the outer peripheral portion of the base member; polishing the plated film together with the plating seed layer by the electrolytic polishing process; and selectively removing the plating seed layer remaining on the outer peripheral portion of the base member.
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申请公布号 |
US6602787(B2) |
申请公布日期 |
2003.08.05 |
申请号 |
US20010879782 |
申请日期 |
2001.06.12 |
申请人 |
SONY CORPORATION |
发明人 |
KOMAI NAOKI;NOGAMI TAKESHI;KITO HIDEYUKI;TAGUCHI MITSURU |
分类号 |
C25D5/48;C25D7/12;H01L21/288;H01L21/3205;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/44;H01L21/302 |
主分类号 |
C25D5/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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