发明名称 |
Method for fabricating ferroelectric memory device and method for fabricating the same |
摘要 |
The ferroelectric memory device has a plurality of capacitor elements each formed on a semiconductor substrate and composed of a lower electrode, a capacitor insulating film made of a ferroelectric material formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. Each of the lower electrodes is buried in a burying insulating film to have an upper surface planarized relative to the upper surface of the burying insulating film and has a plane configuration such that the distance from an arbitrary position on the upper surface of the lower electrode to the nearest end portion thereof is 0.6 mum or less.
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申请公布号 |
US6602721(B2) |
申请公布日期 |
2003.08.05 |
申请号 |
US20010987002 |
申请日期 |
2001.11.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MIKAWA TAKUMI;KUTSUNAI TOSHIE;JUDAI YUJI |
分类号 |
H01L27/105;H01L21/02;H01L21/321;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):H01G7/06 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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