发明名称 POLISHING METHOD AND APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing method and an apparatus, which provide the stability of polishing speed, the superior flatness and level difference characteristics of an object to be polished, and has advantages, such as reducing flaws (scratches) formed on the polishing surface of the object, i.e., semiconductor wafer, and the like, which can be exerted satisfactorily for a variety of objects to be polished. <P>SOLUTION: According to the polishing method, the object 5 is pressed against a polishing tool 1 mainly made of a thermoplastic resin and is slid by pressurization. The object is polished under such an ambient atmosphere for the polishing tool 1 that the temperature of the polishing tool 1 is higher than its glass transition temperature. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003220552(A) 申请公布日期 2003.08.05
申请号 JP20020020034 申请日期 2002.01.29
申请人 EBARA CORP 发明人 HIROKAWA KAZUTO
分类号 B24B37/015;B24B53/017;B24B53/02;B24B53/12;H01L21/304 主分类号 B24B37/015
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