| 摘要 |
A coupling coefficient measuring method for a semiconductor memory capable of directly measuring a coupling coefficient in an actual cell without employing a specific test structure including a non-floating gate electrode or the like is obtained. In this coupling coefficient measuring method for a semiconductor memory, first and second subthreshold currents are measured by changing a drain voltage and increasing a source voltage and thereafter a first source voltage corresponding to a first value of the first: subthreshold current and a second source voltage corresponding to a second value of the second subthreshold current equal to the first value are read while the ratio of the difference between the first drain voltage and the second drain voltage to the difference between the first source voltage and the second source voltage is calculated. Thus, the coupling coefficient between the first gate electrode and a source region can be obtained in an actual cell without providing a specific test structure including a non-floating gate electrode or the like, dissimilarly to the prior art.
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