| 摘要 |
A semiconductor memory device, capable of being accessed at a high speed, according to the present invention, is provided, and is configured with the changeover point in time between the pre-charge operation and a word line selection operation on the far-end side of the sense amplifier being earlier than that on the near-end side of it. There are provided word selection signal input buffer, block selection signal input buffer, digit selection signal input buffer on semiconductor chip, decoders, which decode the said signals, drivers for the output signal of each decoder, memory block, which is stored with information, and gate circuit, which selects a column of memory cells in a memory block. Drivers for the word selection signal and block selection signal are laid out in the middle of chip and near far-end side pre-charge unit, which is located the farthest from the sense amplifier (which is deployed in near-end side pre-charge unit.
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