| 摘要 |
A semiconductor device having a large-area silicide layer and fabrication method is provided. A semiconductor device, consistent with one embodiment of the invention, includes a silicon substrate, a gate insulating layer disposed over the silicon substrate, a gate electrode disposed over the gate insulating layer, and at least one active region disposed adjacent the gate electrode. Formed over the active region and in contact with the insulating layer is a silicide layer. The active region may, for example, be a source/drain region. The silicide layer generally has a surface area which is larger than that of conventional silicide layers. This, for example, reduces the resistance of the active regions of the semiconductor device and enhances device performance.
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