| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a display element by an active matrix drive preventing malfunction of a driving thin film transistor while enhancing light-using rate to the maximum by making a gap from a semiconductor layer to an electrode layer just above a gate electrode a specified value or below and driving with a drive voltage of a specified value or above. SOLUTION: The thin film transistor(TFT) contains a source electrode 11 and a drain electrode 10 formed on one side substrate 4 and the gate electrode 8 arranged above a channel area formed by the source electrode 11 and the drain electrode 10. Then, the gap from the channel area to the electrode layer just above the gate electrode 8 is 2μm, and it is driven by the drive voltage of 10V or above. In such a case, by an electrostatic shield effect, an electric field distribution between the channel area and the gate electrode 8 is provided only by the potential of the gate electrode 8, and isn't affected by the electric field distribution of the outside of it. Thus, the malfunction of the TFT is evaded event when a display electrode group is set up so as to cover the whole TFT.</p> |
